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MXene-GaN van der Waals metal-semiconductor junctions for high performance multiple quantum well photodetectors

Lingzhi Luo Yixuan Huang Keming Cheng Abdullah Alhassan Mahdi Alqahtani Libin Tang Zhiming Wang Jiang Wu

光：科学与应用（英文版）2021，Vol.10Issue(10)：1829-1839,11.

MXene-GaN van der Waals metal-semiconductor junctions for high performance multiple quantum well photodetectors

Lingzhi Luo ¹Yixuan Huang ¹Keming Cheng ¹Abdullah Alhassan ²Mahdi Alqahtani ³Libin Tang ⁴Zhiming Wang ¹Jiang Wu¹

作者信息

1. Institute of Fundamental and Frontier Sciences,University of Electronic Science and Technology of China,610054 Chengdu,China
2. Materials Department,University of California,Santa Barbara,California 93106,USA
3. King Abdulaziz City for Science and Technology(KACST),Riyadh,Saudi Arabia
4. Kunming Institute of Physics,650223 Kunming,Yunnan,China
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摘要

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Lingzhi Luo,Yixuan Huang,Keming Cheng,Abdullah Alhassan,Mahdi Alqahtani,Libin Tang,Zhiming Wang,Jiang Wu..MXene-GaN van der Waals metal-semiconductor junctions for high performance multiple quantum well photodetectors[J].光：科学与应用（英文版）,2021,10(10):1829-1839,11.

基金项目

This work was supported by the National Natural Science Foundation of China(No.61974014),the National Key Research and Development Program of China(No.2019YFB2203400),the Fundamental Research Funds for the Central Universities(ZYGX2019Z018),the Innovation Group Project of Sichuan Province(20CXTD0090),the open project of Key Laboratory of Infrared Imaging Materials and Detectors,Chinese Academy of Sciences(IIMDKFJJ-20-09),and the UESTC Shared Research Facilities of Electromagnetic Wave and Matter Interaction(No.Y0301901290100201). （No.61974014）

光：科学与应用（英文版）

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ISSN：2095-5545

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