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Anisotropic 2D materials for post-Moore photoelectric devices

Dingdong Xie Jie Jiang Liming Ding

半导体学报（英文版）2022，Vol.43Issue(1)：1-3,3.

半导体学报（英文版）2022，Vol.43Issue(1)：1-3,3.DOI:10.1088/1674-4926/43/1/010201

Anisotropic 2D materials for post-Moore photoelectric devices

Dingdong Xie ¹Jie Jiang ¹Liming Ding²

作者信息

1. Hunan Key Laboratory of Super Microstructure and Ultrafast Process,School of Physics and Electronics,Central South University,Changsha 410083,China
2. Center for Excellence in Nanoscience (CAS),Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS),National Center for Nanoscience and Technology,Beijing 100190,China
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摘要

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Dingdong Xie,Jie Jiang,Liming Ding..Anisotropic 2D materials for post-Moore photoelectric devices[J].半导体学报（英文版）,2022,43(1):1-3,3.

基金项目

This work is supported by the National Natural Science Foundation of China (52172169) and the Central South Uni-versity Research Fund for Innovation-driven Program(2019CX024).D.Xie thanks the Fundamental Research Funds for the Central Universities (2020zzts046).L.Ding thanks the National Key Research and Development Program of China(2017YFA0206600) and the National Natural Science Founda-tion of China (51773045,21772030,51922032,21961160720)for financial support. （52172169）

半导体学报（英文版）

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ISSN：1674-4926

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