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A 357.9 nm GaN/AIGaN multiple quantum well ultraviolet laser diode

Jing Yang Degang Zhao Zongshun Liu Feng Liang Ping Chen Lihong Duan Hai Wang Yongsheng Shi

半导体学报（英文版）2022，Vol.43Issue(1)：19-21,3.

半导体学报（英文版）2022，Vol.43Issue(1)：19-21,3.DOI:10.1088/1674-4926/43/1/010501

A 357.9 nm GaN/AIGaN multiple quantum well ultraviolet laser diode

Jing Yang ¹Degang Zhao ¹Zongshun Liu ²Feng Liang ¹Ping Chen ¹Lihong Duan ¹Hai Wang ¹Yongsheng Shi¹

作者信息

1. State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
2. School of Electronic,Electrical and Communication Engineering,University of Chinese Academy of Sciences,Beijing 100049,China
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摘要

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Jing Yang,Degang Zhao,Zongshun Liu,Feng Liang,Ping Chen,Lihong Duan,Hai Wang,Yongsheng Shi..A 357.9 nm GaN/AIGaN multiple quantum well ultraviolet laser diode[J].半导体学报（英文版）,2022,43(1):19-21,3.

基金项目

This work was supported by the National Natural Sci-ence Foundation of China (Grant Nos.62034008,62074142,62074140,61974162,61904172,61874175),the Youth Innova-tion Promotion Association of Chinese Academy of Sciences(Grant No.2019115),Beijing Nova Program (Grant No.202093),Beijing Municipal Science and Technology Project(Grant No.Z211100007921022) and the Strategic Priority Re-search Program of Chinese Academy of Sciences (Grant No.XDB43030101). （Grant Nos.62034008,62074142,62074140,61974162,61904172,61874175）

半导体学报（英文版）

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