首页|期刊导航|半导体学报（英文版）|Investigation on the passivation,band alignment,gate charge,and mobility degradation of the Ge MOSFET with a GeOx/Al2O3 gate stack by ozone oxidation

Investigation on the passivation,band alignment,gate charge,and mobility degradation of the Ge MOSFET with a GeOx/Al2O3 gate stack by ozone oxidation

Lixing Zhou Jinjuan Xiang Xiaolei Wang Wenwu Wang

半导体学报（英文版）2022，Vol.43Issue(1)：43-54,12.

半导体学报（英文版）2022，Vol.43Issue(1)：43-54,12.DOI:10.1088/1674-4926/43/1/013101

Investigation on the passivation,band alignment,gate charge,and mobility degradation of the Ge MOSFET with a GeOx/Al2O3 gate stack by ozone oxidation

Lixing Zhou ¹Jinjuan Xiang ²Xiaolei Wang ²Wenwu Wang²

作者信息

1. Faculty of Information Technology,School of Microelectronics,Beijing University of Technology,Beijing 100124,China
2. Key Laboratory of Microelectronics Devices & Integrated Technology,Institute of Microelectronics of Chinese Academy of Sciences,Beijing 100029,China
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摘要

关键词

Ge MOSFET/ozone oxidation/gate charges/mobility

Key words

Ge MOSFET/ozone oxidation/gate charges/mobility

引用本文复制引用

Lixing Zhou,Jinjuan Xiang,Xiaolei Wang,Wenwu Wang..Investigation on the passivation,band alignment,gate charge,and mobility degradation of the Ge MOSFET with a GeOx/Al2O3 gate stack by ozone oxidation[J].半导体学报（英文版）,2022,43(1):43-54,12.

基金项目

This work is supported by the Natural Science Founda-tion of Beijing Municipality (No.4214079). （No.4214079）

半导体学报（英文版）

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ISSN：1674-4926

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