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Investigation into the InAs/GaAs quantum dot material epitaxially grown on silicon for O band lasers

Tianyi Tang Tian Yu Guanqing Yang Jiaqian Sun Wenkang Zhan Bo Xu Chao Zhao Zhanguo Wang

半导体学报（英文版）2022，Vol.43Issue(1)：55-61,7.

半导体学报（英文版）2022，Vol.43Issue(1)：55-61,7.DOI:10.1088/1674-4926/43/1/012301

Investigation into the InAs/GaAs quantum dot material epitaxially grown on silicon for O band lasers

Tianyi Tang ¹Tian Yu ²Guanqing Yang ³Jiaqian Sun ¹Wenkang Zhan ²Bo Xu ³Chao Zhao ¹Zhanguo Wang²

作者信息

1. Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
2. Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices,Beijing 100083,China
3. College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Science,Beijing 101804,China
折叠

摘要

关键词

semiconductor laser/molecular beam epitaxy/quantum dots/Ⅲ-Ⅴ on Si/silicon photonics

Key words

semiconductor laser/molecular beam epitaxy/quantum dots/Ⅲ-Ⅴ on Si/silicon photonics

引用本文复制引用

Tianyi Tang,Tian Yu,Guanqing Yang,Jiaqian Sun,Wenkang Zhan,Bo Xu,Chao Zhao,Zhanguo Wang..Investigation into the InAs/GaAs quantum dot material epitaxially grown on silicon for O band lasers[J].半导体学报（英文版）,2022,43(1):55-61,7.

基金项目

This work was supported by the National Key Research and Development Program of China (Grant No.2018YFB2200104),the "Strategic Priority Research Program"of the Chinese Academy of Sciences (Grant No.XDB43010102),and the Frontier Science Key Research Pro-gram of CAS (Grant No.QYZDB-SSW-SLH006).Prof.Bo Xu thanks Prof.Jinsong Xia from Huazhong University of Sci-ence and Technology for growing Ge layers on Si. （Grant No.2018YFB2200104）

半导体学报（英文版）

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ISSN：1674-4926

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