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High-power InAIAs/InGaAs Schottky barrier photodiodes for analog microwave signal transmission

K.S.Zhuravlev A.L.Chizh K.B.Mikitchuk A.M.Gilinsky I.B.Chistokhin N.A.Valisheva D.V.Dmitriev A.I.Toropov M.S.Aksenov

半导体学报（英文版）2022，Vol.43Issue(1)：63-67,5.

半导体学报（英文版）2022，Vol.43Issue(1)：63-67,5.DOI:10.1088/1674-4926/43/1/012302

High-power InAIAs/InGaAs Schottky barrier photodiodes for analog microwave signal transmission

K.S.Zhuravlev ¹A.L.Chizh ²K.B.Mikitchuk ²A.M.Gilinsky ¹I.B.Chistokhin ¹N.A.Valisheva ¹D.V.Dmitriev ¹A.I.Toropov ¹M.S.Aksenov¹

作者信息

1. A.V.Rzhanov Institute of Semiconductor Physics,The Siberian Branch of the Russian Academy of Sciences,Ac.Lavrentiev Avenue 13,Novosibirsk 630090,Russia
2. Laboratory of Microwave Photonics,SSPA "Optics,Optoelectronics and Laser Technology" of National Academy of Sciences of Belarus,Logoiski trakt 22,Minsk 220090,Belarus
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摘要

关键词

InAIAs/InGaAs heterostructures/microwave photodiodes/microwave photonics

Key words

InAIAs/InGaAs heterostructures/microwave photodiodes/microwave photonics

引用本文复制引用

K.S.Zhuravlev,A.L.Chizh,K.B.Mikitchuk,A.M.Gilinsky,I.B.Chistokhin,N.A.Valisheva,D.V.Dmitriev,A.I.Toropov,M.S.Aksenov..High-power InAIAs/InGaAs Schottky barrier photodiodes for analog microwave signal transmission[J].半导体学报（英文版）,2022,43(1):63-67,5.

基金项目

The preparation and processing of heterostructures used in this work was supported by the Russian Science Founda-tion (grant number 19-72-30023). （grant number 19-72-30023）

半导体学报（英文版）

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ISSN：1674-4926

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