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High-operating-temperature MWIR photodetector based on a InAs/GaSb superlattice grown by MOCVD

Xiujun Hao Hui Yang Yan Teng He Zhu Jiafeng Liu Hong Zhu Yunlong Huai Meng Li Baile Chen Yong Huang

半导体学报（英文版）2022，Vol.43Issue(1)：69-72,4.

半导体学报（英文版）2022，Vol.43Issue(1)：69-72,4.DOI:10.1088/1674-4926/43/1/012303

High-operating-temperature MWIR photodetector based on a InAs/GaSb superlattice grown by MOCVD

Xiujun Hao ¹Hui Yang ²Yan Teng ¹He Zhu ²Jiafeng Liu ¹Hong Zhu ¹Yunlong Huai ¹Meng Li ¹Baile Chen ¹Yong Huang¹

作者信息

1. Key Laboratory of Nanodevices and Applications,Suzhou Institute of Nano-Tech and Nano-Bionics,CAS,Suzhou 215123,China
2. School of Physical Science and Technology,ShanghaiTech University,Shanghai 201210,China
折叠

摘要

关键词

HOT/MWIR/InAs/GaSb superlattice/aluminum-free/MOCVD

Key words

HOT/MWIR/InAs/GaSb superlattice/aluminum-free/MOCVD

引用本文复制引用

Xiujun Hao,Hui Yang,Yan Teng,He Zhu,Jiafeng Liu,Hong Zhu,Yunlong Huai,Meng Li,Baile Chen,Yong Huang..High-operating-temperature MWIR photodetector based on a InAs/GaSb superlattice grown by MOCVD[J].半导体学报（英文版）,2022,43(1):69-72,4.

基金项目

The authors are grateful for the ShanghaiTech University Quantum Device Lab.This project is supported partly by the Natural Science Foundation of China with Grant No.61874179,No.61804161,No.61975121 and No.61605236,and partly by the National Key Research and Development Pro-gram of China (No.2019YFB2203400). （No.2019YFB2203400）

半导体学报（英文版）

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ISSN：1674-4926

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