| 注册
首页|期刊导航|半导体学报(英文版)|Band gap tuning and p to n-type transition in Mn-doped CuO nanostructured thin films

Band gap tuning and p to n-type transition in Mn-doped CuO nanostructured thin films

R.Rahaman M.Sharmin J.Podder

半导体学报(英文版)2022,Vol.43Issue(1):79-88,10.
半导体学报(英文版)2022,Vol.43Issue(1):79-88,10.DOI:10.1088/1674-4926/43/1/012801

Band gap tuning and p to n-type transition in Mn-doped CuO nanostructured thin films

Band gap tuning and p to n-type transition in Mn-doped CuO nanostructured thin films

R.Rahaman 1M.Sharmin 1J.Podder1

作者信息

  • 1. Department of Physics,Bangladesh University of Engineering and Technology,Dhaka 1000,Bangladesh
  • 折叠

摘要

关键词

Mn:CuO/spray pyrolysis/FESEM/XRD/band gap/Hall effect

Key words

Mn:CuO/spray pyrolysis/FESEM/XRD/band gap/Hall effect

引用本文复制引用

R.Rahaman,M.Sharmin,J.Podder..Band gap tuning and p to n-type transition in Mn-doped CuO nanostructured thin films[J].半导体学报(英文版),2022,43(1):79-88,10.

基金项目

The authors gratefully acknowledge the Bangladesh Uni-versity of Engineering and Technology,Dhaka,Bangladesh,for financial support and the spray pyrolysis lab of the Depart-ment of Physics to perform this work.The authors are thank-ful to Material Science Division,Atomic Energy Center,Dhaka,Bangladesh,for providing the laboratory support for Hall ef-fect measurements. ()

半导体学报(英文版)

OACSCDCSTPCDEI

1674-4926

访问量4
|
下载量0
段落导航相关论文