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Vertical nanowire/nanosheet FETs with a horizontal channel for threshold voltage modulation

Yongbo Liu Huilong Zhu Yongkui Zhang Xiaolei Wang Weixing Huang Chen Li Xuezheng Ai Qi Wang

半导体学报（英文版）2022，Vol.43Issue(1)：89-97,9.

半导体学报（英文版）2022，Vol.43Issue(1)：89-97,9.DOI:10.1088/1674-4926/43/1/014101

Vertical nanowire/nanosheet FETs with a horizontal channel for threshold voltage modulation

Yongbo Liu ¹Huilong Zhu ²Yongkui Zhang ¹Xiaolei Wang ²Weixing Huang ³Chen Li ¹Xuezheng Ai ¹Qi Wang¹

作者信息

1. Key Laboratory of Microelectronics Devices and Integrated Technology,Institute of Microelectronics of Chinese Academy of Sciences,Beijing 100029,China
2. University of Chinese Academy of Sciences,Beijing 100049,China
3. University of Science and Technology of China,Hefei 230026,China
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摘要

关键词

vertical nanowire/nanosheet/silicon on insulator (SOI)/threshold voltage/multi-Vth/threshold voltage modulation

Key words

vertical nanowire/nanosheet/silicon on insulator (SOI)/threshold voltage/multi-Vth/threshold voltage modulation

引用本文复制引用

Yongbo Liu,Huilong Zhu,Yongkui Zhang,Xiaolei Wang,Weixing Huang,Chen Li,Xuezheng Ai,Qi Wang..Vertical nanowire/nanosheet FETs with a horizontal channel for threshold voltage modulation[J].半导体学报（英文版）,2022,43(1):89-97,9.

基金项目

This work is supported by the Academy of Integrated Cir-cuit Innovation of Chinese Academy of Sciences under grant No Y7YC01X001. （）

半导体学报（英文版）

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ISSN：1674-4926

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