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Recent development in electronic structure tuning of graphitic carbon nitride for highly efficient photocatalysis

Chao Li Lei Zhang Haiyan Han Wenshuang Deng Zhanguo Wang Jie Li Yanbin Huang Jun Liu Mengmeng Ma Kong Liu Chao Zhao Zhijie Wang Shengchun Qu

半导体学报（英文版）2022，Vol.43Issue(2)：27-37,11.
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半导体学报（英文版）2022，Vol.43Issue(2)：27-37,11.DOI:10.1088/1674-4926/43/2/021701

Recent development in electronic structure tuning of graphitic carbon nitride for highly efficient photocatalysis

Recent development in electronic structure tuning of graphitic carbon nitride for highly efficient photocatalysis

Chao Li 1Lei Zhang 2Haiyan Han 3Wenshuang Deng 4Zhanguo Wang 4Jie Li 4Yanbin Huang 1Jun Liu 2Mengmeng Ma 3Kong Liu 5Chao Zhao 4Zhijie Wang 1Shengchun Qu2

作者信息

  • 1. Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
  • 2. Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices,Beijing 100083,China
  • 3. Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China
  • 4. School of Mathematical Science and Engineering,Hebei University of Engineering,Handan 056038,China
  • 5. College of Mechanical and Electrical Engineering,Handan University,Handan 056005,China
  • 折叠

摘要

关键词

g-C3N4/photocatalyst/electronic structure

Key words

g-C3N4/photocatalyst/electronic structure

引用本文复制引用

Chao Li,Lei Zhang,Haiyan Han,Wenshuang Deng,Zhanguo Wang,Jie Li,Yanbin Huang,Jun Liu,Mengmeng Ma,Kong Liu,Chao Zhao,Zhijie Wang,Shengchun Qu..Recent development in electronic structure tuning of graphitic carbon nitride for highly efficient photocatalysis[J].半导体学报（英文版）,2022,43(2):27-37,11.

基金项目

This work was mostly supported by the National Natural Science Foundation of China (Nos.21975245,51972300,61674141,12004094,and 21976049),the Key Research Pro-gram of Frontier Science,CAS (QYZDB-SSW-SLH006),the Na-tional Key Research and Development Program of China(Nos.2017YFA0206600 and 2018YFE0204000),the Strategic Pri-ority Research Program of Chinese Academy of Sciences(XDB43000000),the Natural Science Foundation of Hebei Province (F2019402063),the Youth Foundation of Hebei Province Department of Education (QN2019326),the Science and Technology Research and Development Program of Handan city (21422111246),and the Key Project of Handan University (2018101).K.L.acknowledges the support from the Youth Innovation Promotion Association,Chinese Academy of Sciences (2020114).Y.H.also acknowledges the support from the Doctoral Special Fund Project of Hebei University of Engineering. （Nos.21975245,51972300,61674141,12004094,and 21976049）

半导体学报（英文版）

OACSCDCSTPCDEI

1674-4926

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