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A review of compact modeling for phase change memory

Feilong Ding Baokang Peng Xi Li Lining Zhang Runsheng Wang Zhitang Song Ru Huang

半导体学报（英文版）2022，Vol.43Issue(2)：51-64,14.

半导体学报（英文版）2022，Vol.43Issue(2)：51-64,14.DOI:10.1088/1674-4926/43/2/023101

A review of compact modeling for phase change memory

Feilong Ding ¹Baokang Peng ¹Xi Li ²Lining Zhang ¹Runsheng Wang ³Zhitang Song ²Ru Huang³

作者信息

1. School of Electronic and Computer Engineering,Peking University,Shenzhen 518055,China
2. Shanghai Institute of Micro-System and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China
3. Institute of Microelectronics,Peking University,Beijing 100871,China
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摘要

关键词

phase change memory/compact model/macro model/physics-based model

Key words

phase change memory/compact model/macro model/physics-based model

引用本文复制引用

Feilong Ding,Baokang Peng,Xi Li,Lining Zhang,Runsheng Wang,Zhitang Song,Ru Huang..A review of compact modeling for phase change memory[J].半导体学报（英文版）,2022,43(2):51-64,14.

基金项目

This work is supported in part by the National Natural Sci-ence Foundation of China (62074006,91964204),in part by the Major Scientific Instruments and Equipment Develop-ment (61927901),the Shenzhen Science and Technology Project (GXWD20201231165807007-20200827114656001),Strategic Priority Research Program of the Chinese Academy of Sciences (XDB44010200),Science and Technology Council of Shanghai (19JC1416801),the Shanghai Research and Innova-tion Functional Program (17DZ2260900),and in part by the 111 Project (B18001). （62074006,91964204）

半导体学报（英文版）

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ISSN：1674-4926

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