首页|期刊导航|半导体学报:英文版|An integrated front-end vertical hall magnetic sensor fabricated in 0.18μm low-voltage CMOS technology

An integrated front-end vertical hall magnetic sensor fabricated in 0.18μm low-voltage CMOS technology

Zhengwu Shu Lei Jiang Xingxing Hu Yue Xu

半导体学报:英文版2022，Vol.43Issue(3)：P.60-67,8.

半导体学报:英文版2022，Vol.43Issue(3)：P.60-67,8.DOI:10.1088/1674-4926/43/3/032402

An integrated front-end vertical hall magnetic sensor fabricated in 0.18μm low-voltage CMOS technology

Zhengwu Shu ¹Lei Jiang ¹Xingxing Hu ¹Yue Xu¹

作者信息

1. College of Electronic and Optical Engineering&College of Microelectronics,Nanjing University of Posts and Telecommunications,Nanjing 210023,China
折叠

摘要

关键词

vertical Hall sensor/dynamic offset cancellation/1/f noise/residual offset

分类

信息技术与安全科学

引用本文复制引用

Zhengwu Shu,Lei Jiang,Xingxing Hu,Yue Xu..An integrated front-end vertical hall magnetic sensor fabricated in 0.18μm low-voltage CMOS technology[J].半导体学报:英文版,2022,43(3):P.60-67,8.

基金项目

the National Natural Science Foundation of China(Nos.61871231,62171233) （Nos.61871231,62171233）

the Natural Science Foundation of Jiangsu Province,China(No.BK20181390) （No.BK20181390）

the Key Research&Development Plan of Jiangsu Province,China(No.BE2019741) （No.BE2019741）

the Agricultural Science and Technology Independent Innovation Foundation of Jiangsu Province,China(No.CX(21)3062). （No.CX(21）

半导体学报:英文版

OACSCDCSTPCDEI

ISSN：1674-4926

访问量0

下载量0

段落导航