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Performance enhancement of solution-processed InZnO thin-film transistors by Al doping and surface passivation

Wensi Cai Haiyun Li Mengchao Li Zhigang Zang

半导体学报:英文版2022，Vol.43Issue(3)：P.94-103,10.

半导体学报:英文版2022，Vol.43Issue(3)：P.94-103,10.DOI:10.1088/1674-4926/43/3/034102

Performance enhancement of solution-processed InZnO thin-film transistors by Al doping and surface passivation

Wensi Cai ¹Haiyun Li ¹Mengchao Li ¹Zhigang Zang¹

作者信息

1. Key Laboratory of Optoelectronic Technology&System(Ministry of Education),Chongqing University,Chongqing 400044,China
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摘要

关键词

thin-film transistors/oxide semiconductors/Al doping/surface passivation

分类

信息技术与安全科学

引用本文复制引用

Wensi Cai,Haiyun Li,Mengchao Li,Zhigang Zang..Performance enhancement of solution-processed InZnO thin-film transistors by Al doping and surface passivation[J].半导体学报:英文版,2022,43(3):P.94-103,10.

半导体学报:英文版

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ISSN：1674-4926

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