首页|期刊导航|半导体学报:英文版|Performance enhancement of solution-processed InZnO thin-film transistors by Al doping and surface passivation

Performance enhancement of solution-processed InZnO thin-film transistors by Al doping and surface passivationOACSCDCSTPCDEI

中文摘要

Solution-processed oxide semiconductors have been considered as a potential alternative to vacuum-based ones in printable electronics.However,despite spincoated InZnO(IZO)thin-film transistors(TFTs)have shown a relatively hig…查看全部>>

Wensi Cai;Haiyun Li;Mengchao Li;Zhigang Zang

Key Laboratory of Optoelectronic Technology&System(Ministry of Education),Chongqing University,Chongqing 400044,ChinaKey Laboratory of Optoelectronic Technology&System(Ministry of Education),Chongqing University,Chongqing 400044,ChinaKey Laboratory of Optoelectronic Technology&System(Ministry of Education),Chongqing University,Chongqing 400044,ChinaKey Laboratory of Optoelectronic Technology&System(Ministry of Education),Chongqing University,Chongqing 400044,China

电子信息工程

thin-film transistorsoxide semiconductorsAl dopingsurface passivation

《半导体学报:英文版》 2022 (3)

P.94-103,10

10.1088/1674-4926/43/3/034102

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