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Memristive Devices Based on Two-Dimensional Transition Metal Chalcogenides for Neuromorphic Computing

Ki Chang Kwon Ji Hyun Baek Kootak Hong Soo Young Kim Ho Won Jang

纳微快报（英文）2022，Vol.14Issue(4)：29-58,30.

Memristive Devices Based on Two-Dimensional Transition Metal Chalcogenides for Neuromorphic Computing

Ki Chang Kwon ¹Ji Hyun Baek ²Kootak Hong ¹Soo Young Kim ¹Ho Won Jang³

作者信息

1. Department of Materials Science and Engineering,Research Institute of Advanced Materials,Seoul National University,Seoul 08826,Republic of Korea
2. Interdisciplinary Materials Measurement Institute,Korea Research Institute of Standards and Science(KRISS),Daejeon 34133,Republic of Korea
3. Department of Materials Science and Engineering,Institute of Green Manufacturing Technology,Korea University,Seoul 02841,Republic of Korea
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摘要

关键词

Two-dimensional materials/Memristors/Neuromorphic computing/Artificial synapses/Transition metal chalcogenides

Key words

Two-dimensional materials/Memristors/Neuromorphic computing/Artificial synapses/Transition metal chalcogenides

引用本文复制引用

Ki Chang Kwon,Ji Hyun Baek,Kootak Hong,Soo Young Kim,Ho Won Jang..Memristive Devices Based on Two-Dimensional Transition Metal Chalcogenides for Neuromorphic Computing[J].纳微快报（英文）,2022,14(4):29-58,30.

基金项目

This research was supported by the Charac-terization platform for advanced materials funded by the Korea Research Institute of Standards and Science(KRISS-2021-GP2021-0011).This work was supported by the National Research Foundation of Korea(NRF)grant funded by the Korea government MSIT(2021M3D1A20396541).Open access funding provided by Shanghai Jiao Tong University. （KRISS-2021-GP2021-0011）

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ISSN：2311-6706

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