DASP: Defect and Dopant ab-initio Simulation PackageOACSCDCSTPCDEI
In order to perform automated calculations of defect and dopant properties in semiconductors and insulators, we developed a software package, the Defect and Dopant ab-initio Simulation Package(DASP), which is composed of four…查看全部>>
Menglin Huang;Zhengneng Zheng;Zhenxing Dai;Xinjing Guo;Shanshan Wang;Lilai Jiang;Jinchen Wei;Shiyou Chen
Key Laboratory of Computational Physical Sciences(MOE),and State Key Laboratory of ASIC and System,School of Microelectronics,Fudan University,Shanghai 200433,ChinaKey Laboratory of Computational Physical Sciences(MOE),and State Key Laboratory of ASIC and System,School of Microelectronics,Fudan University,Shanghai 200433,ChinaKey Laboratory of Computational Physical Sciences(MOE),and State Key Laboratory of ASIC and System,School of Microelectronics,Fudan University,Shanghai 200433,ChinaKey Laboratory of Computational Physical Sciences(MOE),and State Key Laboratory of ASIC and System,School of Microelectronics,Fudan University,Shanghai 200433,ChinaKey Laboratory of Computational Physical Sciences(MOE),and State Key Laboratory of ASIC and System,School of Microelectronics,Fudan University,Shanghai 200433,ChinaKey Laboratory of Computational Physical Sciences(MOE),and State Key Laboratory of ASIC and System,School of Microelectronics,Fudan University,Shanghai 200433,ChinaKey Laboratory of Computational Physical Sciences(MOE),and State Key Laboratory of ASIC and System,School of Microelectronics,Fudan University,Shanghai 200433,ChinaKey Laboratory of Computational Physical Sciences(MOE),and State Key Laboratory of ASIC and System,School of Microelectronics,Fudan University,Shanghai 200433,China
物理学
defectdopantfirst-principles calculationscarrier dynamics
《半导体学报:英文版》 2022 (4)
P.82-95,14
supported by the joint project between Hongzhiwei Technology (Shanghai) Co., Ltd. and Fudan University。
评论