首页|期刊导航|半导体学报:英文版|DASP: Defect and Dopant ab-initio Simulation Package

DASP: Defect and Dopant ab-initio Simulation Package

Menglin Huang Zhengneng Zheng Zhenxing Dai Xinjing Guo Shanshan Wang Lilai Jiang Jinchen Wei Shiyou Chen

半导体学报:英文版2022，Vol.43Issue(4)：P.82-95,14.

半导体学报:英文版2022，Vol.43Issue(4)：P.82-95,14.DOI:10.1088/1674-4926/43/4/042101

DASP: Defect and Dopant ab-initio Simulation Package

Menglin Huang ¹Zhengneng Zheng ¹Zhenxing Dai ¹Xinjing Guo ¹Shanshan Wang ¹Lilai Jiang ¹Jinchen Wei ¹Shiyou Chen¹

作者信息

1. Key Laboratory of Computational Physical Sciences(MOE),and State Key Laboratory of ASIC and System,School of Microelectronics,Fudan University,Shanghai 200433,China
折叠

摘要

关键词

defect/dopant/first-principles calculations/carrier dynamics

分类

数理科学

引用本文复制引用

Menglin Huang,Zhengneng Zheng,Zhenxing Dai,Xinjing Guo,Shanshan Wang,Lilai Jiang,Jinchen Wei,Shiyou Chen..DASP: Defect and Dopant ab-initio Simulation Package[J].半导体学报:英文版,2022,43(4):P.82-95,14.

基金项目

supported by the joint project between Hongzhiwei Technology (Shanghai) Co., Ltd. and Fudan University。（Shanghai）

半导体学报:英文版

OACSCDCSTPCDEI

ISSN：1674-4926

访问量0

下载量0

段落导航