半导体学报:英文版2022,Vol.43Issue(4):P.60-66,7.DOI:10.1088/1674-4926/43/4/041105
Structural evolution of low-dimensional metal oxide semiconductors under external stress
摘要
关键词
metal oxide semiconductor/phase transition/strain/nanowire/in-situ transmission electron microscopy分类
信息技术与安全科学引用本文复制引用
Peili Zhao,Lei Li,Guoxujia Chen,Xiaoxi Guan,Ying Zhang,Weiwei Meng,Ligong Zhao,Kaixuan Li,Renhui Jiang,Shuangfeng Jia,He Zheng,Jianbo Wang..Structural evolution of low-dimensional metal oxide semiconductors under external stress[J].半导体学报:英文版,2022,43(4):P.60-66,7.基金项目
supported by the National Natural Science Foundation of China (52071237, 12074290, 51871169, 51671148, 11674251, 51601132, 52101021, and 12104345) (52071237, 12074290, 51871169, 51671148, 11674251, 51601132, 52101021, and 12104345)
the Natural Science Foundation of Jiangsu Province (BK20191187) (BK20191187)
the Fundamental Research Funds for the Central Universities (2042019kf0190) (2042019kf0190)
the Science and Technology Program of Shenzhen (JCYJ20190808150407522) (JCYJ20190808150407522)
the China Postdoctoral Science Foundation (2019M652685)。 (2019M652685)