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Comprehensive, in operando, and correlative investigation of defects and their impact on device performance

Yong Zhang David J.Smith

半导体学报:英文版2022，Vol.43Issue(4)：P.24-35,12.

半导体学报:英文版2022，Vol.43Issue(4)：P.24-35,12.DOI:10.1088/1674-4926/43/4/041102

Comprehensive, in operando, and correlative investigation of defects and their impact on device performance

Yong Zhang ¹David J.Smith²

作者信息

1. Electrical and Computer Engineering Department,University of North Carolina at Charlotte,Charlotte,NC 28223,USA
2. Department of Physics,Arizona State University,Tempe,Arizona 85287,USA
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摘要

关键词

device performance/point defects/extended defects

分类

信息技术与安全科学

引用本文复制引用

Yong Zhang,David J.Smith..Comprehensive, in operando, and correlative investigation of defects and their impact on device performance[J].半导体学报:英文版,2022,43(4):P.24-35,12.

基金项目

supported by ARO/Electronics (Grant No. W911NF-16-1-0263) （Grant No. W911NF-16-1-0263）

the support of Bissell Distinguished Professorship at UNC-Charlotte。（）

半导体学报:英文版

OACSCDCSTPCDEI

ISSN：1674-4926

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