发光学报2022，Vol.43Issue(5)：725-735,11.DOI:10.37188/CJL.20220096
优化反式平面钙钛矿太阳电池性能的简便方法——利用PEDOT:PSS与DMSO共混空穴传输层
A Simple Method to Enhance Performance of Inverted Planar Perovskite Solar Cells by Using PEDOT:PSS Doped with DMSO as Hole Transport Layer
摘要
Abstract
In this work, the photovoltaic properties of inverted planar perovskite solar cells are promoted via a sim-ple method by adding Dimethyl sulfoxide(DMSO) into Poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) ( PEDOT:PSS) hole transport layer. Compared to the control device based on pristine PEDOT:PSS, the device with DMSO doping shows different enhancement in short circuit current(Jsc), fill factor(FF) and power conversion effi-ciency(PCE), respectively. The Jsc is increased from 21. 29 mA/cm2 to 22. 15 mA/cm2, the FF is increased from 76. 35％ to 80. 09％, and the PCE is increased from 16. 02％ to 17. 01％, showing 4％, 5％ and 6％ enhancement, respectively. A combination of characterizations has been utilized to systematically investigated the effect of DMSO doping on properties of PEDOT:PSS and perovskite film. It can be found that the incorporation of DMSO leads to a moderate phase separation of PEDOT: PSS, which causes the PEDOT component to form a better conductive chan-nels, enhancing the conductivity and hole transport ability of PEDOT:PSS. The steady-state photoluminescence spec-tra exhibit significant fluorescence quenching, indicating promoted hole extraction ability of PEDOT:PSS after doping with DMSO. Thus, a more efficient hole transfer between the perovskite active layer and the anode is achieved, which contributes to the high fill factor above 80％. So that an effective and easy approach to improve the photovoltaic per-formance of inverted planar perovskite solar cells or organic solar cells is provided.关键词
空穴传输层/电导率/钙钛矿太阳电池/光伏性能Key words
hole transport layer/conductivity/perovskite solar cell/photovoltaic performance分类
信息技术与安全科学引用本文复制引用
王亚凌,杨利营,李岚,印寿根..优化反式平面钙钛矿太阳电池性能的简便方法——利用PEDOT:PSS与DMSO共混空穴传输层[J].发光学报,2022,43(5):725-735,11.基金项目
天津市教委科研计划项目(2019KJ138)资助 （2019KJ138）
