Laser-Derived Interfacial Confinement Enables Planar Growth of 2D SnS2 on Graphene for High-Flux Electron/Ion Bridging in Sodium Storage
Laser-Derived Interfacial Confinement Enables Planar Growth of 2D SnS2 on Graphene for High-Flux Electron/Ion Bridging in Sodium Storage
摘要
关键词
Laser-manufacturing/Metastable/Interfacial engineering/Covalent bridging/Na-storageKey words
Laser-manufacturing/Metastable/Interfacial engineering/Covalent bridging/Na-storage引用本文复制引用
Xiaosa Xu,Fei Xu,Xiuhai Zhang,Changzhen Qu,Jinbo Zhang,Yuqian Qiu,Rong Zhuang,Hongqiang Wang..Laser-Derived Interfacial Confinement Enables Planar Growth of 2D SnS2 on Graphene for High-Flux Electron/Ion Bridging in Sodium Storage[J].纳微快报（英文）,2022,14(6):65-80,16.基金项目
This work was financially supported by the project of National Key R&D Program for International Coopera-tion(2021YFE0115100),the National Natural Science Foundation of China(Nos.51872240,51972270 and 52172101),Shaanxi Prov-ince Key Research and Development Program(2021ZDLGY14-08),Natural Science Foundation of Shaanxi Province(2020JZ-07),the Research Fund of the State Key Laboratory of Solidification Processing(NPU),China(2021-TS-03),the Fundamental Research Funds for the Central Universities(3102019JC005)and the Research Fund of the State Key Laboratory of Solid Lubrication(CAS),China(LSL-2007).The authors would like to thank the Analytical&Testing Center of Northwestern Polytechnical Uni-versity and Shaanxi Materials Analysis and Research Center for ICP,XPS,SEM and TEM characterizations.Open access funding provided by Shanghai Jiao Tong University. （2021YFE0115100）
