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Optimization of recess-free AlGaN/GaN Schottky barrier diode by TiN anode and current transport mechanism analysis

Hao Wu Xuanwu Kang Yingkui Zheng Ke Wei Lin Zhang Xinyu Liu Guoqi Zhang

半导体学报:英文版2022，Vol.43Issue(6)：P.51-58,8.

半导体学报:英文版2022，Vol.43Issue(6)：P.51-58,8.DOI:10.1088/1674-4926/43/6/062803

Optimization of recess-free AlGaN/GaN Schottky barrier diode by TiN anode and current transport mechanism analysis

Hao Wu ¹Xuanwu Kang ²Yingkui Zheng ²Ke Wei ²Lin Zhang ³Xinyu Liu ²Guoqi Zhang⁴

作者信息

1. The Institute of Future Lighting,Academy for Engineering and Technology,Fudan University(FAET),Shanghai 200433,China Institute of Microelectronics of the Chinese Academy of Sciences,Beijing 100029,China
2. Institute of Microelectronics of the Chinese Academy of Sciences,Beijing 100029,China
3. Beijing Const-Intellectual Core Technology Co.Ltd,Beijing 100029,China
4. The Institute of Future Lighting,Academy for Engineering and Technology,Fudan University(FAET),Shanghai 200433,China
折叠

摘要

关键词

AlGaN/GaN/Schottky barrier diode/TiN/current transport mechanism

分类

信息技术与安全科学

引用本文复制引用

Hao Wu,Xuanwu Kang,Yingkui Zheng,Ke Wei,Lin Zhang,Xinyu Liu,Guoqi Zhang..Optimization of recess-free AlGaN/GaN Schottky barrier diode by TiN anode and current transport mechanism analysis[J].半导体学报:英文版,2022,43(6):P.51-58,8.

基金项目

This work was supported in part by Natural Science Foundation of China(Grant No.61804172) （Grant No.61804172）

in part by GuangDong Province Key Technologies Research and Development Program(No.2019B010128001) （No.2019B010128001）

in part by the Youth Innovation Promotion Association of CAS. （）

半导体学报:英文版

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ISSN：1674-4926

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