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Modulating properties by light ion irradiation:From novel functional materials to semiconductor power devices

Ye Yuan Shengqiang Zhou Xinqiang Wang

半导体学报:英文版2022，Vol.43Issue(6)：P.66-77,12.

半导体学报:英文版2022，Vol.43Issue(6)：P.66-77,12.DOI:10.1088/1674-4926/43/6/063101

Modulating properties by light ion irradiation:From novel functional materials to semiconductor power devices

Ye Yuan ¹Shengqiang Zhou ²Xinqiang Wang³

作者信息

1. Songshan Lake Materials Laboratory,Dongguan 523808,China
2. Institute of Ion Beam Physics and Material Research,Helmholtz-Zentrum Dresden-Rossendorf,Dresden 01328,Germany
3. Songshan Lake Materials Laboratory,Dongguan 523808,China Dongguan Institute of Optoelectronics,Peking University,Dongguan 523808,China
折叠

摘要

关键词

ion irradiation/power device/crystal/thin film/functional materials

分类

信息技术与安全科学

引用本文复制引用

Ye Yuan,Shengqiang Zhou,Xinqiang Wang..Modulating properties by light ion irradiation:From novel functional materials to semiconductor power devices[J].半导体学报:英文版,2022,43(6):P.66-77,12.

基金项目

This work was supported by Key-Area Research and Development Program of Guangdong Province(No.2019B 010132001) （No.2019B 010132001）

This work was also partially funded by Guangdong Basic and Applied Basic Research Foundation(2020A1515110891). （2020A1515110891）

半导体学报:英文版

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ISSN：1674-4926

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