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Observation of resistive switching in a graphite/hexagonal boron nitride/graphite heterostructure memristor

Yafeng Deng Yixiang Li Pengfei Wang Shuang Wang Xuan Pan Dong Wang

半导体学报:英文版2022，Vol.43Issue(5)：P.84-88,5.

半导体学报:英文版2022，Vol.43Issue(5)：P.84-88,5.DOI:10.1088/1674-4926/43/5/052003

Observation of resistive switching in a graphite/hexagonal boron nitride/graphite heterostructure memristor

Yafeng Deng ¹Yixiang Li ²Pengfei Wang ²Shuang Wang ²Xuan Pan ²Dong Wang¹

作者信息

1. Mechanical&Electrical Engineering College of Henan Agricultural University,Zhengzhou 450002,China
2. Institute of Brain-Inspired Intelligence,National Laboratory of Solid State Microstructures,School of Physics,Collaborative Innovation Center of Advanced Microstructures,Nanjing University,Nanjing 210093,China
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摘要

关键词

hexagonal boron nitride/van der Waals heterostructure/memristor

分类

信息技术与安全科学

引用本文复制引用

Yafeng Deng,Yixiang Li,Pengfei Wang,Shuang Wang,Xuan Pan,Dong Wang..Observation of resistive switching in a graphite/hexagonal boron nitride/graphite heterostructure memristor[J].半导体学报:英文版,2022,43(5):P.84-88,5.

基金项目

supported by Laboratory of Solid State Microstructures,Nanjing University(M34049) （M34049）

the Jiangsu Postdoctoral Research Funding Program under Grant No.2021K451C。（）

半导体学报:英文版

OACSCDCSTPCDEI

ISSN：1674-4926

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