半导体学报:英文版2022，Vol.43Issue(5)：P.104-108,5.DOI:10.1088/1674-4926/43/5/054101
Effect of charge trapping on electrical characteristics of silicon junctionless nanowire transistor
Yifan Fu 1Liuhong Ma 2Zhiyong Duan 3Weihua Han4
作者信息
- 1. School of Physics and Microelectronics,Zhengzhou University,Zhengzhou 450001,China
- 2. School of Physics and Microelectronics,Zhengzhou University,Zhengzhou 450001,China Engineering Research Center for Semiconductor Integrated Technology,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100083,China
- 3. School of Physics and Microelectronics,Zhengzhou University,Zhengzhou 450001,China Institute of Intelligence Sensing in Zhengzhou University,Zhengzhou 450001,China
- 4. Engineering Research Center for Semiconductor Integrated Technology,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100083,China
- 折叠
摘要
关键词
junctionless transistor/charge trapping/random telegraph signals分类
信息技术与安全科学引用本文复制引用
Yifan Fu,Liuhong Ma,Zhiyong Duan,Weihua Han..Effect of charge trapping on electrical characteristics of silicon junctionless nanowire transistor[J].半导体学报:英文版,2022,43(5):P.104-108,5.基金项目
supported by the National Natural Science Foundation of China(Grant Nos.613760966,1327813,61404126 and 11947115) （Grant Nos.613760966,1327813,61404126 and 11947115）
the Natural Science Foundation of Henan Province under(Grant No.202300410444) （Grant No.202300410444）
Foreign Experts Program of Ministry of Science and Technology in China(Grant No.G2021026027L)。 （Grant No.G2021026027L）
