半导体学报:英文版2022，Vol.43Issue(5)：P.109-115,7.DOI:10.1088/1674-4926/43/5/054102
Uniform, fast, and reliable CMOS compatible resistive switching memory
Yunxia Hao 1Ying Zhang 1Zuheng Wu 2Xumeng Zhang 3Tuo Shi 4Yongzhou Wang 4Jiaxue Zhu 1Rui Wang 1Yan Wang 1Qi Liu5
作者信息
- 1. Key Laboratory of Microelectronic Devices&Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China University of Chinese Academy of Sciences,Beijing 100049,China
- 2. School of Integrated Circuits,Anhui University,Hefei 230601,China
- 3. Frontier Institute of Chip and System,Fudan University,Shanghai 200433,China
- 4. Key Laboratory of Microelectronic Devices&Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
- 5. Key Laboratory of Microelectronic Devices&Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China University of Chinese Academy of Sciences,Beijing 100049,China Frontier Institute of Chip and System,Fudan University,Shanghai 200433,China
- 折叠
摘要
关键词
uniformity/resistance switching/field enhance layer/thermal enhance layer and interface modulation分类
信息技术与安全科学引用本文复制引用
Yunxia Hao,Ying Zhang,Zuheng Wu,Xumeng Zhang,Tuo Shi,Yongzhou Wang,Jiaxue Zhu,Rui Wang,Yan Wang,Qi Liu..Uniform, fast, and reliable CMOS compatible resistive switching memory[J].半导体学报:英文版,2022,43(5):P.109-115,7.基金项目
supported by the National Key R&D Program of China under Grant No.2018YFA0701500 （）
the National Natural Science Foundation of China under Grant Nos.61825404,U20A20220,61732020,and 61851402 （）
the Strategic Priority Research Program of the Chinese Academy of Sciences under Grant No.XDB44000000 （）
the China Postdoctoral Science Foundation under Grant No.2020M681167。 （）
