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Growth of Tellurium Nanobelts on h-BN for p-type Transistors with Ultrahigh Hole Mobility

Peng Yang Zhengbao Yang Ye Chen Dong-Keun Ki Juin J.Liou Wugang Liao Chaoliang Tan Jiajia Zha Guoyun Gao Long Zheng Haoxin Huang Yunpeng Xia Songcen Xu Tengfei Xiong Zhuomin Zhang

纳微快报（英文）2022，Vol.14Issue(7)：43-54,12.
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纳微快报（英文）2022，Vol.14Issue(7)：43-54,12.

Growth of Tellurium Nanobelts on h-BN for p-type Transistors with Ultrahigh Hole Mobility

Growth of Tellurium Nanobelts on h-BN for p-type Transistors with Ultrahigh Hole Mobility

Peng Yang 1Zhengbao Yang 2Ye Chen 3Dong-Keun Ki 4Juin J.Liou 5Wugang Liao 1Chaoliang Tan 1Jiajia Zha 2Guoyun Gao 6Long Zheng 2Haoxin Huang 5Yunpeng Xia 4Songcen Xu 2Tengfei Xiong 2Zhuomin Zhang2

作者信息

  • 1. College of Electronics and Information Engineering,Shenzhen University,Shenzhen 518060,People's Republic of China
  • 2. Department of Electrical Engineering,City University of Hong Kong,Hong Kong SAR,People's Republic of China
  • 3. Department of Mechanical Engineering,City University of Hong Kong,Hong Kong SAR,People's Republic of China
  • 4. Department of Chemistry,The Chinese University of Hong Kong,Hong Kong SAR,People's Republic of China
  • 5. Department of Physics,The University of Hong Kong,Pokfulam Road,Hong Kong SAR,People's Republic of China
  • 6. Center of Super-Diamond and Advanced Films(COSDAF),City University of Hong Kong,Hong Kong SAR,People's Republic of China
  • 折叠

摘要

关键词

Chemical vapor deposition/Substrate engineering/Tellurium/Field-effect transistors/Hole mobility

Key words

Chemical vapor deposition/Substrate engineering/Tellurium/Field-effect transistors/Hole mobility

引用本文复制引用

Peng Yang,Zhengbao Yang,Ye Chen,Dong-Keun Ki,Juin J.Liou,Wugang Liao,Chaoliang Tan,Jiajia Zha,Guoyun Gao,Long Zheng,Haoxin Huang,Yunpeng Xia,Songcen Xu,Tengfei Xiong,Zhuomin Zhang..Growth of Tellurium Nanobelts on h-BN for p-type Transistors with Ultrahigh Hole Mobility[J].纳微快报（英文）,2022,14(7):43-54,12.

基金项目

This work is supported by the financial sup-ports from National Natural Science Foundation of China(Grant No.61904110)and Young Teachers'Startup Fund for Scientific Research of Shenzhen University(Grant No.860-000002110426).C.T.thanks the funding support from the National Natural Science Foundation of China(52122002),the Start-Up Grant(Project No.9610495)from City University of Hong Kong and ECS scheme(CityU 21201821)from the Research Grant Council of Hong Kong.We thank Instrument Analysis Center of Shenzhen University for the assistance with TEM analysis.Open access funding provided by Shanghai Jiao Tong University. （Grant No.61904110）

纳微快报（英文）

OACSCDCSTPCDEISCI

2311-6706

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