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一种基于n-ZnS/p-CuSCN纳米薄膜的高开关比和稳定性紫外光电探测器

魏瑶琪 全家乐 赵庆强 邹明琛 韩三灿

发光学报2022,Vol.43Issue(6):911-921,11.
发光学报2022,Vol.43Issue(6):911-921,11.DOI:10.37188/CJL.20220069

一种基于n-ZnS/p-CuSCN纳米薄膜的高开关比和稳定性紫外光电探测器

A Stable UV Photodetector Based on n-ZnS/p-CuSCN Nanofilm with High On/Off Ratio

魏瑶琪 1全家乐 1赵庆强 1邹明琛 1韩三灿1

作者信息

  • 1. 上海理工大学 材料与化学学院,上海 200093
  • 折叠

摘要

Abstract

Herein,We fabricated a CuSCN nanofilm ultraviolet(UV)photodetector(PD)using an in situ growth method. When the bias is -1 V and the incident light is 350 nm,the on/off ratio of the CuSCN PD is ~94,and the rise/decay time is~1. 41 s/1. 44 s. However,such a device still cannot be called a high-performance photodetector. To improve the optoelectronic properties of CuSCN nanofilm further,we fabricated a UV photodetector based on n-ZnS/p-CuSCN composite nanofilm and analyzed its morphology,composition,and properties. The photocurrent and dark current of the ZnS/CuSCN UV photodetectors are 1. 22×10-5 A and 4. 8×10-9 A,respectively(at-1 V,350 nm). The ZnS/CuSCN nanofilms'on/off ratio of~2542 and rise/decay time is 0. 47 s/0. 48 s. Besides,the n-ZnS/p-CuSCN nanofilm UV PDs have the best responsivity and detectivity at 350 nm with 5. 17 mA/W and 1. 32 × 1011 Jones,re-spectively. In addition,the n-ZnS/p-CuSCN composite film is stable at room temperature,which indicates its great potential as a high-performance UV photodetector.

关键词

光电探测器/p-n结/ZnS/CuSCN/开关比

Key words

photodetector/p-n junction/ZnS/CuSCN/on/off ratio

分类

信息技术与安全科学

引用本文复制引用

魏瑶琪,全家乐,赵庆强,邹明琛,韩三灿..一种基于n-ZnS/p-CuSCN纳米薄膜的高开关比和稳定性紫外光电探测器[J].发光学报,2022,43(6):911-921,11.

基金项目

国家自然科学基金(51802195) (51802195)

上海市教委晨光学者项目(19CG53)资助Supported by National Natural Science Foundation of China(51802195) (19CG53)

Chenguang Scholar Project of Shanghai Education Commission(19CG53) (19CG53)

发光学报

OA北大核心CSCDCSTPCD

1000-7032

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