红外与毫米波学报2022，Vol.41Issue(2)：384-388,5.DOI:10.11972/j.issn.1001-9014.2022.02.002
基于MIS电容器的Al2O3与In0.74Al0.26As的界面特性
Interfacial properties between Al2O3 and In0.74Al0.26As epitaxial layer on MIS capacitors
摘要
Abstract
Metal-Insulator-Semiconductor(MIS)capacitors were fabricated on In0. 74Al0. 26As/In0. 74Ga0. 26As/Inx?Al1-xAs heterostructure multilayer semiconductor materials. SiNx and SiNx/Al2O3 bilayer were applied as insulating layer to prepare MIS capacitors respectively. High-resolution transmission electron microscopy(HRTEM)and X-ray photoelectron spectroscopy(XPS)measurements indicated that,compared with SiNx deposited by inductively coupled plasma chemical vapor deposition(ICPCVD),Al2O3 deposited by atomic layer deposition(ALD)can ef?fectively suppresses In2O3 at the interface between Al2O3 and In0. 74Al0. 26As. According to the capacitance-voltage (C-V)measurement result of MIS capacitors,the fast interface state density(Dit)of SiNx/Al2O3/In0. 74Al0. 26As was one order of magnitude lower than that of SiNx/In0. 74Al0. 26As. Therefore,it can be concluded that Al2O3 deposited by ALD as a passivation film can effectively reduce the interface state density between Al2O3 and In0. 74Al0. 26As, thereby reducing the dark current of p-In0. 74Al0. 26As/i-In0. 76Ga0. 24As/n-InxAl1-xAs photodiodes.关键词
InAlAs/原子层沉积/Al2O3/SiNx/金属-绝缘体-半导体电容器/界面态密度Key words
InAlAs/ALD/Al2O3/SiNx/MIS capacitor/interface state density引用本文复制引用
万露红,邵秀梅,李雪,顾溢,马英杰,李淘..基于MIS电容器的Al2O3与In0.74Al0.26As的界面特性[J].红外与毫米波学报,2022,41(2):384-388,5.基金项目
Supported by National Natural Science Foundation of China(61704180,62175250) （61704180,62175250）
