红外与毫米波学报2022，Vol.41Issue(2)：420-424,5.DOI:10.11972/j.issn.1001-9014.2022.02.006
面向MOCVD生长InAs/GaSb超晶格红外探测的InAs衬底表面制备
Preparation of epi-ready InAs substrate surface for InAs/GaSb superlattice infrared detectors grown by MOCVD
摘要
Abstract
Total reflection X-ray fluorescence spectroscopy(TXRF)and X-ray photo-electron spectroscopy (XPS)have been used to investigate residual impurities and oxides on polished InAs substrate surface wet cleaned by different solution combination. Metal impurities Si,K and Ca are routinely detected on the cleaned InAs sur?face and their concentration change with the variation of solution combination. A large quantity of particles(80 nm size)is measured on the InAs substrate surface with higher residual impurity concentration. An effective wet chemical cleaning procedure is presented to prepare InAs substrate surface with less residual impurity,small parti?cle quantity and thin oxide layer,which are beneficial to high quality epitaxial growth.关键词
砷化铟/衬底/表面清洗/全反射X射线荧光光谱/X射线光电子能谱Key words
InAs/substrate/surface cleaning/total reflection X-ray fluorescence (TXRF)/X-ray photo-electron spectroscopy(XPS)分类
数理科学引用本文复制引用
刘丽杰,赵有文,黄勇,赵宇,王俊,王应利,沈桂英,谢辉..面向MOCVD生长InAs/GaSb超晶格红外探测的InAs衬底表面制备[J].红外与毫米波学报,2022,41(2):420-424,5.基金项目
Supported by National Natural Science Foundation of China(61904175) （61904175）
