红外与毫米波学报2022，Vol.41Issue(2)：443-447,5.DOI:10.11972/j.issn.1001-9014.2022.02.010
InP基共振隧穿二极管太赫兹振荡器的设计与实现
Design and realization of InP-based resonant tunneling diode THz oscillator
摘要
Abstract
An oscillator above 1 THz is designed and realized using InP-based resonant tunneling diode(RTD) and an on-chip antenna with Si-lens. The RTD model was built and studied with Silvaco software. The influences of the doping concentration of emitter,the thickness of barrier layer,space layer,and well layer on the DC char?acteristics of the device have been analyzed. The DC measurement of the RTD shows the peak current density Jp=359. 2 kA/cm2,the valley current density Jv = 135. 8 kA/cm2,and the peak-to-valley current ratio(PVCR)=2. 64. According to the measurement,the maximum RF output power and oscillation frequency(fmax)are theoreti?cally calculated,which are 1. 71 mW and 1. 49 THz,respectively. The oscillator with an on-chip bow-tie antenna and RTD is packaged with Si-lens. The measurement shows the output power is 2. 57 μW at an operation frequen?cy of above 1 THz,the DC power consumption is 8. 33 mW. This is the first reported oscillator of frequency above 1 THz in domestic.关键词
太赫兹/共振隧穿二极管/振荡器Key words
THz/resonant tunneling diode/oscillator分类
数理科学引用本文复制引用
刘军,宋瑞良,刘宁,梁士雄..InP基共振隧穿二极管太赫兹振荡器的设计与实现[J].红外与毫米波学报,2022,41(2):443-447,5.基金项目
Supported by National Key R&D Program of China(2018YFE0202500),National Key Research and Development Program of China(2017YFC08219),Manned Space Advanced Research Project(060401),Advanced Research Project of Civil Aerospace Technology(B0105). （2018YFE0202500）
