红外与毫米波学报2022，Vol.41Issue(3)：540-544,5.DOI:10.11972/j.issn.1001-9014.2022.03.003
基于富铟团簇量子结构的双波长可调谐半导体激光器
Tunable dual-wavelength semiconductor laser based on indium-rich cluster quantum structure
摘要
Abstract
We design and fabricate a double-wavelength tunable laser with a single grating structure using a single-gain chip. The gain chip adopts an indium-rich cluster quantum constraint structure,which can generate ultra-wide flat-top gain. The flat-top gain is the basis for producing a dual-wavelength laser with the same intensity. A grating is inserted into the exterior of the gain chip so that its resonator is composed of internal and external cavi?ties. The internal cavity consists of two natural cleavage planes of the gain chip for oscillating the output laser at a fixed wavelength(974 nm). The tunable external cavity consists of a natural cleavage plane and a grating for the output laser at a tunable wavelength(969. 1～977. 9 nm). The laser structures of the single-gain chip and single grating can produce synchronous dual-wavelength output,which avoids a complicated optical path design. The frequency difference between the two wavelengths is in the terahertz band. Thus,the laser can be used as a dual-wavelength laser source to generate terahertz radiation.关键词
半导体激光器/富铟团簇/可调谐Key words
tunable laser/dual-wavelength laser/indium-rich clusters分类
信息技术与安全科学引用本文复制引用
李雪,邰含旭,王玉龙,郑明,张建伟,张星,宁永强,吴坚,王立军..基于富铟团簇量子结构的双波长可调谐半导体激光器[J].红外与毫米波学报,2022,41(3):540-544,5.基金项目
Supported in part by the National Key Research and Development Program(2020YFC2200300),in part by the National Natural Science Foundation of China(11774343,51672264,61874119,61874117),in part by the Science and Technology Development Project of Jilin Province(20200401006GX). （2020YFC2200300）
