Electron mobility anisotropy in(Al,Ga)Sb/InAs two-dimensional electron gases epitaxied on GaAs(001)substratesOA

作者：Qiqi Wei;Hailong Wang;Xupeng Zhao;Jianhua Zhao

作者单位：State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,ChinaCollege of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,ChinaState Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,ChinaCollege of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China

中文关键词：molecular-beam epitaxy(Al,Ga)Sb/InAs two-dimensional electron gaseselectron mobility anisotropypiezoelectric scattering

英文关键词：molecular-beam epitaxy(Al,Ga)Sb/InAs two-dimensional electron gaseselectron mobility anisotropypiezoelectric scattering

刊名：《半导体学报（英文版）》 2022 (7)

相关项目：基于半导体二维电子气的高精度人体弱磁探测研究

页码/页数：57-62,6

基金：This work is supported by NSFC(Grants No.11834013 and 12174383).H.L.Wang also acknowledges the support from the Youth Innovation Promotion Association,Chinese Academy of Sciences(No.2021110).

DOI：10.1088/1674-4926/43/7/072101