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Electron mobility anisotropy in(Al,Ga)Sb/InAs two-dimensional electron gases epitaxied on GaAs(001)substrates

Qiqi Wei Hailong Wang Xupeng Zhao Jianhua Zhao

半导体学报（英文版）2022，Vol.43Issue(7)：57-62,6.

半导体学报（英文版）2022，Vol.43Issue(7)：57-62,6.DOI:10.1088/1674-4926/43/7/072101

Electron mobility anisotropy in(Al,Ga)Sb/InAs two-dimensional electron gases epitaxied on GaAs(001)substrates

Qiqi Wei ¹Hailong Wang ²Xupeng Zhao ¹Jianhua Zhao²

作者信息

1. State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
2. College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China
折叠

摘要

关键词

molecular-beam epitaxy/(Al,Ga)Sb/InAs two-dimensional electron gases/electron mobility anisotropy/piezoelectric scattering

Key words

molecular-beam epitaxy/(Al,Ga)Sb/InAs two-dimensional electron gases/electron mobility anisotropy/piezoelectric scattering

引用本文复制引用

Qiqi Wei,Hailong Wang,Xupeng Zhao,Jianhua Zhao..Electron mobility anisotropy in(Al,Ga)Sb/InAs two-dimensional electron gases epitaxied on GaAs(001)substrates[J].半导体学报（英文版）,2022,43(7):57-62,6.

基金项目

This work is supported by NSFC(Grants No.11834013 and 12174383).H.L.Wang also acknowledges the support from the Youth Innovation Promotion Association,Chinese Academy of Sciences(No.2021110). （Grants No.11834013 and 12174383）

半导体学报（英文版）

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