半导体学报（英文版）2022，Vol.43Issue(7)：87-91,5.DOI:10.1088/1674-4926/43/7/072801
Improving the incorporation of indium component for InGaN-based green LED through inserting photonic crystalline in the GaN layer
Improving the incorporation of indium component for InGaN-based green LED through inserting photonic crystalline in the GaN layer
Yunqi Li 1Xinwei Wang 2Ning Zhang 2Xuecheng Wei 2Junxi Wang2
作者信息
- 1. Institute of First Medical Center,Chinese PLA General Hospital,Beijing 100853,China
- 2. State Key Laboratory of Solid-State Lighting,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
- 折叠
摘要
关键词
epitaxial growth/nanocrystalline materials/semiconductors/Raman/stress relief/X-ray techniquesKey words
epitaxial growth/nanocrystalline materials/semiconductors/Raman/stress relief/X-ray techniques引用本文复制引用
Yunqi Li,Xinwei Wang,Ning Zhang,Xuecheng Wei,Junxi Wang..Improving the incorporation of indium component for InGaN-based green LED through inserting photonic crystalline in the GaN layer[J].半导体学报（英文版）,2022,43(7):87-91,5.
