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Graphene-driving novel strain relaxation towards AlN film and DUV photoelectronic devices

Hieu.P.T.Nguyen

光：科学与应用（英文版）2022，Vol.11Issue(7)：1318-1319,2.

Hieu.P.T.Nguyen¹

作者信息

1. New Jersey Institute of Technology,Department of Electrical&Computer Engineering,Newark,NJ 07102,USA
折叠

Hieu.P.T.Nguyen..Graphene-driving novel strain relaxation towards AlN film and DUV photoelectronic devices[J].光：科学与应用（英文版）,2022,11(7):1318-1319,2.

H.P.T.N.acknowledges support from the National Science Foundation(Grant 997290),and the New Jersey Health Foundation(Grant PC 24-22). （Grant 997290）

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ISSN：2095-5545

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