光：科学与应用（英文版）2022，Vol.11Issue(7)：1322-1323,2.
"Clean"doping to advance 2D material phototransistors
"Clean"doping to advance 2D material phototransistors
Zhen Wang 1Peng Wang 1Weida Hu1
作者信息
- 1. State Key Laboratory of Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,200083 Shanghai,China
- 折叠
引用本文复制引用
Zhen Wang,Peng Wang,Weida Hu.."Clean"doping to advance 2D material phototransistors[J].光：科学与应用（英文版）,2022,11(7):1322-1323,2.
