Simulation of MoS2 stacked nanosheet field effect transistor
Simulation of MoS2 stacked nanosheet field effect transistor
摘要
关键词
MoS2/stacked nanosheet GAA/TCAD simulationKey words
MoS2/stacked nanosheet GAA/TCAD simulation引用本文复制引用
Yang Shen,He Tian,Tianling Ren..Simulation of MoS2 stacked nanosheet field effect transistor[J].半导体学报（英文版）,2022,43(8):43-47,5.基金项目
This work was supported in part by National Natural Sci-ence Foundation of China under Grant 62022047,Grant 61874065,Grant U20A20168 and Grant 51861145202,in part by the National Key R&D Program under Grant 2021YFC3002200 and Grant 2020YFA0709800,in part by Fok Ying-Tong Education Foundation under Grant 171051,in part by Beijing Natural Science Foundation(M22020),in part by Beijing National Research Center for Information Science and Technology Youth Innovation Fund(BNR2021RC01007)and in part by State Key Laboratory of New Ceramic and Fine Processing Tsinghua University(No.KF202109),in part by Tsinghua-Foshan Innovation Special Fund(TFISF)(2021THFS0217),in part by the Research Fund from Beijing Innovation Center for Future Chip and the Independent Research Program of Tsinghua University under Grant 20193080047.This work is also supported by the Opening Project of Key Laboratory of Microelectronic Devices&Integ-rated Technology,Institute of Microelectronics,Chinese Academy of Sciences. （M22020）
