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Research on quantum well intermixing of 680 nm AIGalnP/GalnP semiconductor lasers induced by composited Si-Si3N4 dielectric layer

Tianjiang He Suping Liu Wei Li Cong Xiong Nan Lin Li Zhong Xiaoyu Ma

半导体学报（英文版）2022，Vol.43Issue(8)：49-55,7.

半导体学报（英文版）2022，Vol.43Issue(8)：49-55,7.DOI:10.1088/1674-4926/43/8/082301

Research on quantum well intermixing of 680 nm AIGalnP/GalnP semiconductor lasers induced by composited Si-Si3N4 dielectric layer

Tianjiang He ¹Suping Liu ²Wei Li ¹Cong Xiong ¹Nan Lin ¹Li Zhong ¹Xiaoyu Ma²

作者信息

1. National Engineering Research Center for Optoelectronic Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
2. College of Materials Science and Optoelectronics,University of Chinese Academy of Sciences,Beijing 100049,China
折叠

摘要

关键词

high power semiconductor laser/rapid thermal annealing/composited dielectric layer/quantum well intermixing/op-tical catastrophic damage/nonabsorbent window

Key words

high power semiconductor laser/rapid thermal annealing/composited dielectric layer/quantum well intermixing/op-tical catastrophic damage/nonabsorbent window

引用本文复制引用

Tianjiang He,Suping Liu,Wei Li,Cong Xiong,Nan Lin,Li Zhong,Xiaoyu Ma..Research on quantum well intermixing of 680 nm AIGalnP/GalnP semiconductor lasers induced by composited Si-Si3N4 dielectric layer[J].半导体学报（英文版）,2022,43(8):49-55,7.

基金项目

This work was supported by the National Natural Sci-ence Foundation of China(NNSFC)(Grant No.62174154). （NNSFC）

半导体学报（英文版）

ISSN：1674-4926

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