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首页|期刊导航|半导体学报(英文版)|A low-power high-quality CMOS image sensor using 1.5 V 4T pinned photodiode and dual-CDS column-parallel single-slope ADC

A low-power high-quality CMOS image sensor using 1.5 V 4T pinned photodiode and dual-CDS column-parallel single-slope ADC

Wenjing Xu Jie Chen Zhangqu Kuang Li Zhou Ming Chen Chengbin Zhang

半导体学报(英文版)2022,Vol.43Issue(8):57-63,7.
半导体学报(英文版)2022,Vol.43Issue(8):57-63,7.DOI:10.1088/1674-4926/43/8/082401

A low-power high-quality CMOS image sensor using 1.5 V 4T pinned photodiode and dual-CDS column-parallel single-slope ADC

A low-power high-quality CMOS image sensor using 1.5 V 4T pinned photodiode and dual-CDS column-parallel single-slope ADC

Wenjing Xu 1Jie Chen 2Zhangqu Kuang 1Li Zhou 3Ming Chen 1Chengbin Zhang1

作者信息

  • 1. Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
  • 2. University of Chinese Academy of Sciences,Beijing 100049,China
  • 3. Will Semiconductor Co.Ltd.,Shanghai 201210,China
  • 折叠

摘要

关键词

CMOS image sensor/4T pinned photodiode/single-slope ADC/correlated double sample/counting method

Key words

CMOS image sensor/4T pinned photodiode/single-slope ADC/correlated double sample/counting method

引用本文复制引用

Wenjing Xu,Jie Chen,Zhangqu Kuang,Li Zhou,Ming Chen,Chengbin Zhang..A low-power high-quality CMOS image sensor using 1.5 V 4T pinned photodiode and dual-CDS column-parallel single-slope ADC[J].半导体学报(英文版),2022,43(8):57-63,7.

基金项目

This work was supported by the National Key R&D Pro-gram of China(2019YFB2204304). (2019YFB2204304)

半导体学报(英文版)

OACSCDCSTPCDEI

1674-4926

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