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Influence of epitaxial layer structure and cell structure on electrical performance of 6.5 kV SiC MOSFET

Lixin Tian Zechen Du Rui Liu Xiping Niu Wenting Zhang Yunlai An Zhanwei Shen Fei Yang Xiaoguang Wei

半导体学报（英文版）2022，Vol.43Issue(8)：77-83,7.

半导体学报（英文版）2022，Vol.43Issue(8)：77-83,7.DOI:10.1088/1674-4926/43/8/082802

Influence of epitaxial layer structure and cell structure on electrical performance of 6.5 kV SiC MOSFET

Lixin Tian ¹Zechen Du ¹Rui Liu ¹Xiping Niu ¹Wenting Zhang ¹Yunlai An ¹Zhanwei Shen ²Fei Yang ¹Xiaoguang Wei¹

作者信息

1. State Key Laboratory of Advanced Power Transmission Technology,Global Energy Interconnection Research Institute Co.,Ltd.,Beijing 102209,China
2. Key Laboratory of Semiconductor Material Sciences,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
折叠

摘要

关键词

silicon carbide/epitaxial layer/channel length/JFET region width/FN tunneling/HTGB

Key words

silicon carbide/epitaxial layer/channel length/JFET region width/FN tunneling/HTGB

引用本文复制引用

Lixin Tian,Zechen Du,Rui Liu,Xiping Niu,Wenting Zhang,Yunlai An,Zhanwei Shen,Fei Yang,Xiaoguang Wei..Influence of epitaxial layer structure and cell structure on electrical performance of 6.5 kV SiC MOSFET[J].半导体学报（英文版）,2022,43(8):77-83,7.

基金项目

The authors thank the support of the National Key Re-search and Development Program(Grant No.2016YFB0400500)and the Science&Technology Program of the State Grid Corporation of China Co.,Ltd."High voltage and high power SiC materials,devices and the application demonstra-tion in power electronic transformers". （Grant No.2016YFB0400500）

半导体学报（英文版）

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ISSN：1674-4926

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