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Hyperdoped silicon:Processing,properties,and devices

Zhouyu Tong Mingxuan Bu Yiqiang Zhang Deren Yang Xiaodong Pi

半导体学报:英文版2022，Vol.43Issue(9)：P.10-24,15.

半导体学报:英文版2022，Vol.43Issue(9)：P.10-24,15.DOI:10.1088/1674-4926/43/9/093101

Hyperdoped silicon:Processing,properties,and devices

Zhouyu Tong ¹Mingxuan Bu ¹Yiqiang Zhang ²Deren Yang ³Xiaodong Pi³

作者信息

1. State Key Laboratory of Silicon Materials&School of Materials Science and Engineering,Zhejiang University,Hangzhou 310027,China
2. School of Materials Science and Engineering&College of Chemistry,Zhengzhou University,Zhengzhou 450001,China
3. State Key Laboratory of Silicon Materials&School of Materials Science and Engineering,Zhejiang University,Hangzhou 310027,China Institute of Advanced Semiconductors&Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices,Hangzhou Innovation Center,Zhejiang University,Hangzhou 311215,China
折叠

摘要

关键词

silicon/hyperdoping/ion implantation/laser doping/photodetectors/solar cells

分类

信息技术与安全科学

引用本文复制引用

Zhouyu Tong,Mingxuan Bu,Yiqiang Zhang,Deren Yang,Xiaodong Pi..Hyperdoped silicon:Processing,properties,and devices[J].半导体学报:英文版,2022,43(9):P.10-24,15.

基金项目

supported by the National Key Research and Development Program of China (Grant Nos. 2017YFA0205704 and 2018YFB2200101) （Grant Nos. 2017YFA0205704 and 2018YFB2200101）

the Natural Science Foundation of China (Grant Nos. 91964107 and U20A20209) （Grant Nos. 91964107 and U20A20209）

provided by the Natural Science Foundation of China for Innovative Research Groups (Grant No. 61721005) （Grant No. 61721005）

半导体学报:英文版

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ISSN：1674-4926

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