半导体学报:英文版2022，Vol.43Issue(9)：P.74-80,7.DOI:10.1088/1674-4926/43/9/092802
Electrical and optical properties of hydrogen plasma treatedβ-Ga_(2)O_(3) thin films
Qian Jiang 1Junhua Meng 2Yiming Shi 3Zhigang Yin 4Jingren Chen 4Jing Zhang 5Jinliang Wu 6Xingwang Zhang4
作者信息
- 1. Key Lab of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China School of Information Science and Technology,North China University of Technology,Beijing 100144,China
- 2. Faculty of Science,Beijing University of Technology,Beijing 100124,China
- 3. Key Lab of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China Faculty of Science,Beijing University of Technology,Beijing 100124,China
- 4. Key Lab of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China
- 5. School of Information Science and Technology,North China University of Technology,Beijing 100144,China
- 6. Key Lab of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
- 折叠
摘要
关键词
β-Ga_(2)O_(3)film/hydrogen plasma treatment/electrical properties/scattering mechanisms/defect分类
数理科学引用本文复制引用
Qian Jiang,Junhua Meng,Yiming Shi,Zhigang Yin,Jingren Chen,Jing Zhang,Jinliang Wu,Xingwang Zhang..Electrical and optical properties of hydrogen plasma treatedβ-Ga_(2)O_(3) thin films[J].半导体学报:英文版,2022,43(9):P.74-80,7.基金项目
supported by the National Natural Science Foundation of China (Grant Nos. 62174009, 61904174 and 61874106) （Grant Nos. 62174009, 61904174 and 61874106）
the Natural Science Foundation of Beijing Municipality (Grant No. 4212045) （Grant No. 4212045）
the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB43000000) （Grant No. XDB43000000）
