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Ni/Pd-based ohmic contacts to p-GaN through p-InGaN/p^(+)-GaN contacting layers

Minglong Zhang Masao Ikeda Siyi Huang Jianping Liu Jianjun Zhu Shuming Zhang Hui Yang

半导体学报:英文版2022，Vol.43Issue(9)：P.81-86,6.

半导体学报:英文版2022，Vol.43Issue(9)：P.81-86,6.DOI:10.1088/1674-4926/43/9/092803

Ni/Pd-based ohmic contacts to p-GaN through p-InGaN/p^(+)-GaN contacting layers

Minglong Zhang ¹Masao Ikeda ¹Siyi Huang ¹Jianping Liu ¹Jianjun Zhu ²Shuming Zhang ¹Hui Yang¹

作者信息

1. School of Nano-Tech and Nano-Bionics,University of Science and Technology of China,Hefei 230026,China Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China
2. Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China
折叠

摘要

关键词

GaN/ohmic contact/specific contact resistance

分类

矿业与冶金

引用本文复制引用

Minglong Zhang,Masao Ikeda,Siyi Huang,Jianping Liu,Jianjun Zhu,Shuming Zhang,Hui Yang..Ni/Pd-based ohmic contacts to p-GaN through p-InGaN/p^(+)-GaN contacting layers[J].半导体学报:英文版,2022,43(9):P.81-86,6.

基金项目

the National Key Research and Development Program of China(2017YFE0131500) （2017YFE0131500）

the Key Research and Development Program of Guangdong Province(2020B090922001) （2020B090922001）

National Natural Science Foundation of China(61834008) （61834008）

Key Research and Development Program of Jiangsu province(BE2020004,BE2021008-1) （BE2020004,BE2021008-1）

Guangdong Basic and Applied Basic Research Foundation(2019B1515120091). （2019B1515120091）

半导体学报:英文版

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ISSN：1674-4926

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