半导体学报:英文版2022，Vol.43Issue(9)：P.64-67,4.DOI:10.1088/1674-4926/43/9/092601
RF characterization of InP double heterojunction bipolar transistors on a flexible substrate under bending conditions
Lishu Wu 1Jiayun Dai 2Yuechan Kong 2Tangsheng Chen 2Tong Zhang3
作者信息
- 1. Joint International Research Laboratory of Information Display and Visualization,School of Electronic Science and Engineering,Southeast University,Nanjing 210096,China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory,Nanjing Electronic Devices Institute,Nanjing 210016,China
- 2. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory,Nanjing Electronic Devices Institute,Nanjing 210016,China
- 3. Joint International Research Laboratory of Information Display and Visualization,School of Electronic Science and Engineering,Southeast University,Nanjing 210096,China Key Laboratory of Micro-Inertial Instrument and Advanced Navigation Technology,Ministry of Education,School of Instrument Science and Engineering,Southeast University,Nanjing 210096,China
- 折叠
摘要
关键词
InP DHBT/thermal resistance/radio frequency/bending分类
信息技术与安全科学引用本文复制引用
Lishu Wu,Jiayun Dai,Yuechan Kong,Tangsheng Chen,Tong Zhang..RF characterization of InP double heterojunction bipolar transistors on a flexible substrate under bending conditions[J].半导体学报:英文版,2022,43(9):P.64-67,4.基金项目
National Natural Science Foundation of China under Grants 61875241. （）
