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溅射法制备n型碲化镉薄膜的光电化学特性研究

曹萌王林军虞斌张翔许成刚张珊孙丽颖谭小宏姜昱丞豆家伟

红外与毫米波学报2022，Vol.41Issue(4)：659-667,9.

红外与毫米波学报2022，Vol.41Issue(4)：659-667,9.DOI:10.11972/j.issn.1001-9014.2022.04.001

溅射法制备n型碲化镉薄膜的光电化学特性研究

Photoelectrochemical properties of sputtered n-type CdTe thin films

曹萌 ¹王林军 ²虞斌 ²张翔 ³许成刚 ¹张珊 ²孙丽颖 ²谭小宏 ⁴姜昱丞 ⁵豆家伟²

作者信息

1. 中广核工程有限公司核电安全监控技术与装备国家重点实验室,广东深圳,518172
2. 上海大学材料科学与工程学院,上海200072
3. 上海大学(浙江)高端装备基础件材料研究院,浙江嘉善314113
4. 中国科学院上海技术物理研究所红外成像材料和探测器实验室,上海200083
5. 杨浦区市东医院重症监护科室,上海200438
折叠

摘要

Abstract

In this paper,n-type CdTe thin films were prepared by sputtering method. The morphology,structure and optical properties of n-type CdTe thin films deposited with different time and the influence of film thickness and annealing process on the photoelectrochemical(PEC)characteristics of n-type CdTe thin films were studied. The experimental results demonstrated that CdTe thin films with sputtering time of 25 min had better PEC perfor?mance. Annealing process could enhance the PEC properties of deposited n-type CdTe thin films. When CdTe thin films were coated with saturated CdCl2 solution and annealed in vacuum at 400 ° C,the photocurrents of n-type CdTe thin films achieved 301 μA/cm2.

关键词

碲化镉/溅射/光电化学/退火

Key words

CdTe/sputtering/photoelectrochemical/annealing

分类

通用工业技术

引用本文复制引用

曹萌,王林军,虞斌,张翔,许成刚,张珊,孙丽颖,谭小宏,姜昱丞,豆家伟..溅射法制备n型碲化镉薄膜的光电化学特性研究[J].红外与毫米波学报,2022,41(4):659-667,9.

基金项目

Supported by Open Topic of the State Key Laboratory of Nuclear Power Safety Monitoring Technology and Equipment(K-A 2019.418),and Open Topic of Key Laboratory of Infrared Imaging Materials and Devices(IIMDKFJJ-20-01) （K-A 2019.418）

红外与毫米波学报

OA北大核心CSCDCSTPCDSCI

ISSN：1001-9014

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