红外与毫米波学报2022，Vol.41Issue(4)：668-671,4.DOI:10.11972/j.issn.1001-9014.2022.04.002
基于0.35μm高压CMOS工艺的横向线性雪崩光电二极管
Lateral linear mode avalanche photodiode through 0.35 μm high voltage CMOS process
摘要
Abstract
This letter reports on a lateral linear mode avalanche photodiode through 0. 35 μm high voltage CMOS process. The linear mode avalanche photodiode is designed and fabricated with the lateral separate absorption, charge and multiplication(SACM)structure using an epitaxial wafer. The DNTUB layer,DPTUB layer,Pi lay?er and SPTUB layer are used for the lateral SACM structure. This improves freedom of the design and fabrication for monolithic integrated avalanche photodiode without high voltage CMOS process modifications. The break?down voltage for the lateral linear mode avalanche photodiode is about 114. 7 V. The dark currents at gain M=10 and M =50 are about 15 nA and 66 nA,respectively. The effective responsive wavelength range is 450～1050 nm. And the peak responsive wavelength is about 775 nm at 20 V while M=1. With unity gain(M=1),the re?sponsivity at 532 nm is about half of the maximum.关键词
雪崩光电二极管/横向SACM/高压CMOS工艺/击穿电压Key words
avalanche photodiode/lateral SACM/high voltage CMOS/breakdown voltage分类
信息技术与安全科学引用本文复制引用
鞠国豪,程正喜,陈永平..基于0.35μm高压CMOS工艺的横向线性雪崩光电二极管[J].红外与毫米波学报,2022,41(4):668-671,4.基金项目
Supported by the Shanghai Pujiang Program(18PJ1410700),Key Laboratory of Defense Technology Funding of Chinese Academy of Sci?ences(CXJJ-20S004),and Innovation Program of Shanghai Institute of Technical Physics,Chinese Academy of Sciences(CX-268) （18PJ1410700）
