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Growth of Fe-Doped and V-Doped MoS2 and Their Magnetic-Electrical Effects

Rui Tao Ze-Gao Wang Zhi-Hao Yang Chao Tan Xin Hao Zun-Gui Ke Lei Yang Li-Ping Dai Xin-Wu Deng Ping-Jian Li

电子科技学刊2022，Vol.20Issue(3)：225-236,12.

电子科技学刊2022，Vol.20Issue(3)：225-236,12.DOI:10.1016/j.jnlest.2022.100167

Growth of Fe-Doped and V-Doped MoS2 and Their Magnetic-Electrical Effects

Rui Tao ¹Ze-Gao Wang ¹Zhi-Hao Yang ¹Chao Tan ¹Xin Hao ²Zun-Gui Ke ²Lei Yang ¹Li-Ping Dai ³Xin-Wu Deng ³Ping-Jian Li³

作者信息

1. College of Materials Science and Engineering, Sichuan University, Chengdu 610065
2. Southwest Institute of Technical Physics, Chengdu 610046
3. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054
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摘要

关键词

Magnetic domain/magnetic doping/MoS2/p-type semiconductor

Key words

Magnetic domain/magnetic doping/MoS2/p-type semiconductor

引用本文复制引用

Rui Tao,Ze-Gao Wang,Zhi-Hao Yang,Chao Tan,Xin Hao,Zun-Gui Ke,Lei Yang,Li-Ping Dai,Xin-Wu Deng,Ping-Jian Li..Growth of Fe-Doped and V-Doped MoS2 and Their Magnetic-Electrical Effects[J].电子科技学刊,2022,20(3):225-236,12.

基金项目

This work was financially supported by the National Natural Science Foundation of China under Grant No.52002254 （）

the Sichuan Science and Technology Foundation under Grants No.2020YJ0262,No.2021YFH0127,and No.2022YFH0083 （）

the Chunhui Plan of Ministry of Education,Fundamental Research Funds for the Central Universities under Grant No.YJ201893 （）

the Open-Foundation of Key Laboratory of Laser Device Technology,China North Industries Group Corporation Limited under Grant No.KLLDT202104 （）

the Open-Foundation of State Key Lab of Advanced Metals and Materials under Grant No.2019-Z03. （）

电子科技学刊

OACSCD

ISSN：1674-862X

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