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Multilayer doped-GeSe OTS selector for improved endurance and threshold voltage stability

Shiqing Zhang Bing Song Shujing Jia Rongrong Cao Sen Liu Hui Xu Qingjiang Li

半导体学报:英文版2022，Vol.43Issue(10)：P.97-102,6.

半导体学报:英文版2022，Vol.43Issue(10)：P.97-102,6.DOI:10.1088/1674-4926/43/10/104101

Multilayer doped-GeSe OTS selector for improved endurance and threshold voltage stability

Shiqing Zhang ¹Bing Song ¹Shujing Jia ²Rongrong Cao ¹Sen Liu ¹Hui Xu ¹Qingjiang Li¹

作者信息

1. College of Electronic Science and Technology,National University of Defense Technology,Changsha 410073,China
2. Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China
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摘要

关键词

ovonic threshold switch/selector/GeSe/multilayer structure/endurance/stability

分类

信息技术与安全科学

引用本文复制引用

Shiqing Zhang,Bing Song,Shujing Jia,Rongrong Cao,Sen Liu,Hui Xu,Qingjiang Li..Multilayer doped-GeSe OTS selector for improved endurance and threshold voltage stability[J].半导体学报:英文版,2022,43(10):P.97-102,6.

基金项目

supported by National Natural Science Foundation of China(Grant Nos.61974164,62074166,61804181,62004219,and 6200422). （Grant Nos.61974164,62074166,61804181,62004219,and 6200422）

半导体学报:英文版

OACSCDCSTPCDEI

ISSN：1674-4926

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