半导体学报:英文版2022,Vol.43Issue(10):P.73-78,6.DOI:10.1088/1674-4926/43/10/102801
Identification of subsurface damage of 4H-SiC wafers by combining photo-chemical etching and molten-alkali etching
摘要
关键词
4H-SiC/subsurface damages/photo-chemical etching/molten-alkali etching分类
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Wenhao Geng,Guang Yang,Xuqing Zhang,Xi Zhang,Yazhe Wang,Lihui Song,Penglei Chen,Yiqiang Zhang,Xiaodong Pi,Deren Yang,Rong Wang..Identification of subsurface damage of 4H-SiC wafers by combining photo-chemical etching and molten-alkali etching[J].半导体学报:英文版,2022,43(10):P.73-78,6.基金项目
supported by “Pioneer” and “Leading Goose”R&D Program of Zhejiang (Grant No. 2022C01021) (Grant No. 2022C01021)
National Key Research and Development Program of China (Grant No.2018YFB2200101) (Grant No.2018YFB2200101)
National Natural Science Foundation of China (Grant Nos. 91964107, 61774133) (Grant Nos. 91964107, 61774133)
Fundamental Research Funds for the Central Universities (Grant No.2018XZZX003-02) (Grant No.2018XZZX003-02)
Natural Science Foundation of China for Innovative Research Groups (Grant No. 61721005) (Grant No. 61721005)
Zhejiang University Education Foundation Global Partnership Fund ()