|国家科技期刊平台
| 注册
首页|期刊导航|半导体学报:英文版|Integration of high-performance spin-orbit torque MRAM devices by 200-mm-wafer manufacturing platform

Integration of high-performance spin-orbit torque MRAM devices by 200-mm-wafer manufacturing platform

Hongchao Zhang Xiangyue Ma Chuanpeng Jiang Jialiang Yin Shuqin Lyu Shiyang Lu Xiantao Shang Bowen Man Cong Zhang Dandan Li Shuhui Li Wenjing Chen Hongxi Liu Gefei Wang Kaihua Cao Zhaohao Wang Weisheng Zhao

半导体学报:英文版2022，Vol.43Issue(10)：P.64-72,9.
✕
半导体学报:英文版2022，Vol.43Issue(10)：P.64-72,9.DOI:10.1088/1674-4926/43/10/102501

Integration of high-performance spin-orbit torque MRAM devices by 200-mm-wafer manufacturing platform

Hongchao Zhang 1Xiangyue Ma 1Chuanpeng Jiang 1Jialiang Yin 1Shuqin Lyu 2Shiyang Lu 2Xiantao Shang 2Bowen Man 2Cong Zhang 2Dandan Li 2Shuhui Li 2Wenjing Chen 3Hongxi Liu 2Gefei Wang 2Kaihua Cao 4Zhaohao Wang 1Weisheng Zhao4

作者信息

  • 1. Fert Beijing Institute,School of Integrated Science and Engineering,Beihang University,Beijing 100191,China
  • 2. Truth Memory Tech.Corporation,Beijing 100088,China
  • 3. Beihang-Goertek Joint Microelectronics Institute,Qingdao Research Institute,Beihang University,Qingdao 266000,China
  • 4. Fert Beijing Institute,School of Integrated Science and Engineering,Beihang University,Beijing 100191,China Beihang-Goertek Joint Microelectronics Institute,Qingdao Research Institute,Beihang University,Qingdao 266000,China
  • 折叠

摘要

关键词

SOT MTJ/low switching current densities/200-mm-wafer platform/endurance/data retention

分类

信息技术与安全科学

引用本文复制引用

Hongchao Zhang,Xiangyue Ma,Chuanpeng Jiang,Jialiang Yin,Shuqin Lyu,Shiyang Lu,Xiantao Shang,Bowen Man,Cong Zhang,Dandan Li,Shuhui Li,Wenjing Chen,Hongxi Liu,Gefei Wang,Kaihua Cao,Zhaohao Wang,Weisheng Zhao..Integration of high-performance spin-orbit torque MRAM devices by 200-mm-wafer manufacturing platform[J].半导体学报:英文版,2022,43(10):P.64-72,9.

基金项目

supported by the National Key Research and Development Program of China(Grant Nos.2021YFB3601303,2021YFB3601304,2021YFB3601300) （Grant Nos.2021YFB3601303,2021YFB3601304,2021YFB3601300）

National Natural Science Foundation of China(Nos.62001014 and 62171013)。 （Nos.62001014 and 62171013）

半导体学报:英文版

OACSCDCSTPCDEI

1674-4926

访问量4
|
下载量0
段落导航相关论文