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High photon detection efficiency InGaAs/InP single photon avalanche diode at 250 K

Tingting He Xiaohong Yang Yongsheng Tang Rui Wang Yijun Liu

半导体学报:英文版2022，Vol.43Issue(10)：P.56-63,8.

半导体学报:英文版2022，Vol.43Issue(10)：P.56-63,8.DOI:10.1088/1674-4926/43/10/102301

High photon detection efficiency InGaAs/InP single photon avalanche diode at 250 K

Tingting He ¹Xiaohong Yang ¹Yongsheng Tang ¹Rui Wang ¹Yijun Liu¹

作者信息

1. State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China
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摘要

关键词

single period sinusoidal pulse/InGaAs/InP single photon avalanche diode/parallel balanced/photon detection effi-ciency/dark count rate/noise-equivalent power

分类

信息技术与安全科学

引用本文复制引用

Tingting He,Xiaohong Yang,Yongsheng Tang,Rui Wang,Yijun Liu..High photon detection efficiency InGaAs/InP single photon avalanche diode at 250 K[J].半导体学报:英文版,2022,43(10):P.56-63,8.

基金项目

jointly supported by the National Key Research and Development Program of China (2019YFB22-05202) （2019YFB22-05202）

National Natural Science Foundation of China(61774152) （61774152）

半导体学报:英文版

OACSCDCSTPCDEI

ISSN：1674-4926

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