太阳能Issue(10)：68-73,6.DOI:10.19911/j.1003-0417.tyn20210830.01
低温低压氧化工艺对PERC单晶硅太阳电池性能影响的研究
STUDY ON EFFECT OF LOW TEMPERATURE AND LOW PRESSURE OXIDATION PROCESS ON THE PERFORMANCE OF PERC MONO-Si SOLAR CELLS
摘要
Abstract
In this paper，the PERC mono-Si solar cells using low temperature and low pressure oxidation process are used as the research object，and the silicon dioxide layer prepared at 600～700℃ low temperature and 200 mbar low pressure is used as the passivation layer on the emitter surface of PERC mono-Si solar cells. The performance of this kind of solar cells are tested and compared with that of the PERC mono-Si solar cells without oxidation process. The test results show that the photoelectric conversion efifciency of PERC mono-Si solar cells with low temperature and low pressure oxidation process can be increased by 0.64%and the sheet resistance can be increased by 8.3Ω/□，the minority carrier lifetime can be increased by 59.76μs，and the open-circuit voltage and short-circuit current can be increased by 0.0108 V and 0.13 A，respectively. It can be seen that the low temperature and low pressure oxidation process is an effective way to improve the photoelectric conversion efifciency of PERC mono-Si solar cells. It is expected to improve the reference for the preparation of more efifcient PERC mono-Si solar cells.关键词
PERC单晶硅太阳电池/低温低压/氧化工艺/钝化层/二氧化硅Key words
PERC mono-Si solar cells/low temperature and low pressure/oxidation process/passivation layer/SO2分类
信息技术与安全科学引用本文复制引用
左克祥,王安,张晋阳,钱金忠,李永田,杜东亚,凡金星..低温低压氧化工艺对PERC单晶硅太阳电池性能影响的研究 [J].太阳能,2022,(10):68-73,6.基金项目
国家重点研发计划(2018YFB1500503) （2018YFB1500503）
